Modeling of Electrical Overstress in Integrated Circuits by Carlos H. Diaz, Sung-Mo (Steve) Kang, Charvaka Duvvury

By Carlos H. Diaz, Sung-Mo (Steve) Kang, Charvaka Duvvury

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose some of the most dominant threats to built-in circuits (ICs). those reliability issues have gotten extra severe with the downward scaling of machine characteristic sizes. Modeling of electric Overstress inIntegrated Circuits offers a finished research of EOS/ESD-related disasters in I/O safeguard units in built-in circuits.
The layout of I/O safeguard circuits has been performed in a hit-or-miss means because of the loss of systematic research instruments and urban layout instructions. quite often, the improvement of on-chip safeguard buildings is a long dear iterative approach that includes tester layout, fabrication, checking out and redecorate. while the know-how is modified, a similar technique needs to be repeated virtually solely. this is attributed to the inability of effective CAD instruments able to simulating the machine habit as much as the onset of failure that is a 3D electrothermal challenge. For those purposes, you will need to increase and use an sufficient degree of the EOS robustness of built-in circuits which will handle the on-chip EOS security factor. primary figuring out of the actual phenomena resulting in machine mess ups below ESD/EOS occasions is required for the improvement of equipment versions and CAD instruments which can successfully describe the gadget habit as much as the onset of thermal failure.
Modeling of electric Overstress in built-in Circuits is for VLSI designers and reliability engineers, rather those people who are engaged on the advance of EOS/ESD research instruments. CAD engineers engaged on improvement of circuit point and gadget point electrothermal simulators also will enjoy the fabric coated. This publication may also be of curiosity to researchers and primary and moment 12 months graduate scholars operating in semiconductor units and IC reliability fields.

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Modeling of Electrical Overstress in Integrated Circuits

Electric overstress (EOS) and Electrostatic discharge (ESD) pose essentially the most dominant threats to built-in circuits (ICs). those reliability matters have gotten extra severe with the downward scaling of gadget function sizes. Modeling of electric Overstress inIntegrated Circuits offers a complete research of EOS/ESD-related mess ups in I/O defense units in built-in circuits.

Extra resources for Modeling of Electrical Overstress in Integrated Circuits

Sample text

Notice that in contrast to the grounded gate device, the multifinger turn-on is observed with local voltage maxima. The improvement of the ESD failure thresholds with this concept is illustrated in Fig. 14(a) for an LDD process with no silicide and in Fig. 14(b) for an LDD process with silicided diffusions. It is obvious that not only did the performance improve dramatically, but also an almost ideal width dependency was obtained reflecting the uniformity in device conduction. Gate-coupled devices can be expected to maintain uniform conduction behaviour for the longer EOS kind of stress events.

The first mode occurs due to what is known as 'electrothermomigration'. Moving the drain contact farther away from the gate edge can eliminate this mode [85]. The second mode occurs due to the isotropic nature of the heat source which can spread through the thin insulating gate dielectric and melt the polysilicon. Since the gate is encapsulated, the heat cannot escape, resulting in the gate-to-drain melt filament. Once this is formed, the electric field shifts and another filament is formed on the source side.

2 Rev. 4 Rev. 7 Power profiles of the output pulldown transistor in the bidirectional pins of device Cl. Two different layout design revisions are considered here. times that is only broadened by the random device-to-device variations and the parasitics of the test fixtures. 1) The least-square fit of the experimental data was used to determine the two sets of a, b coefficients required for each one of the four device types considered in this study. 1 shows the results for both the input and output protection transistors of each device type.

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